FCPF1300N80Z Key Features
- RDS(on) = 1.05 Ω (Typ.)
- Ultra Low Gate Charge (Typ. Qg = 16.2 nC)
- Low Eoss (Typ. 1.57 uJ @ 400V)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
- 100% Avalanche Tested
- RoHS pliant
- ESD Improved Capability
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCPF1300N80Z | N-Channel MOSFET |