FCPF190N65FL1 Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FCPF190N65FL1 Features

* 700 V @TJ = 150°C

* RDS(on) = 168 mΩ (Typ.)

* Ultra Low Gate Charge (Typ. Qg = 60 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)

* 100% Avalanche Tested

* RoHS Compliant Applications

* LCD / LED / PDP TV

* Telecom

FCPF190N65FL1 General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchi.

FCPF190N65FL1 Datasheet (885.57 KB)

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Part number:

FCPF190N65FL1

Manufacturer:

Fairchild Semiconductor

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885.57 KB

Description:

N-channel mosfet.
FCPF190N65FL1 N-Channel SuperFET® II FRFET® MOSFET December 2014 FCPF190N65FL1 N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.6 A, 190 mΩ .

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FCPF190N65FL1 N-Channel MOSFET Fairchild Semiconductor

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FCPF190N65FL1 Features

FCPF190N65FL1 General Description

Datasheet Details

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