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FCPF22N60NT Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FCP22N60N / FCPF22N60NT — N-Channel SupreMOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ November.

Download the FCPF22N60NT datasheet PDF. This datasheet also includes the FCP22N60N variant, as both parts are published together in a single manufacturer document.

General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.

SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industria

Key Features

  • BVDSS > 650 V @ TJ = 150oC.
  • RDS(on) = 140 mΩ (Typ. ) @ VGS = 10 V, ID = 11 A.
  • Ultra Low Gate Charge (Typ. Qg = 45 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 196.4 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.