FCPF400N80Z Key Features
- Typ. RDS(on) = 340 mΩ
- Ultra Low Gate Charge (Typ. Qg = 43 nC)
- Low Eoss (Typ. 4.1 uJ @ 400 V)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF)
- 100% Avalanche Tested
- RoHS pliant
- ESD Improved Capability
- Part: FCPF400N80Z
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 631.98 KB
Other FCPF400N80Z Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCPF400N80ZCN | N-Channel MOSFET |
onsemi |
FCPF400N80ZL1-F154 | N-Channel MOSFET |