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FCPF400N80ZL1-F154 - N-Channel MOSFET

General Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • Typ. RDS(on) = 340 mW.
  • Ultra Low Gate Charge (Typ. Qg = 43 nC).
  • Low Eoss (Typ. 4.1 mJ @ 400 V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 138 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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MOSFET – N-Channel, SUPERFET) II 800 V, 11 A, 400 mW FCPF400N80ZL1-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate−source ESD diode allows to withstand over 2 kV HBM surge stress. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. Features • Typ. RDS(on) = 340 mW • Ultra Low Gate Charge (Typ. Qg = 43 nC) • Low Eoss (Typ. 4.