FCPF4300N80Z Datasheet | Fairchild Semiconductor

- N-Channel Super FET® II MOSFET August 2015 N-Channel Super FET® II MOSFET 800 V, 2.2 A, 4.3 Ω Features - RDS(on) = 3.4 Ω (Typ.) - Ultra Low Gate Charge (Typ. Qg = 6.8 n C) - Low Eoss (Typ. 0.8 u J @ 400V) - Low Effective Output Capacitance (Typ. Coss(eff.) = 36 p F) - 100% Avalanche Tested - Ro HS pliant - ESD Improved Capability Applications Description Super FET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. - AC - DC Power Supply - LED Lighting GDS...