Datasheet Summary
- N-Channel SuperFET® II MOSFET
August 2015
N-Channel SuperFET® II MOSFET
800 V, 2.2 A, 4.3 Ω Features
- RDS(on) = 3.4 Ω (Typ.)
- Ultra Low Gate Charge (Typ. Qg = 6.8 nC)
- Low Eoss (Typ. 0.8 uJ @ 400V)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 36 pF)
- 100% Avalanche Tested
- RoHS pliant
- ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching...