FCPF650N80Z Key Features
- RDS(on) = 530 mΩ (Typ.)
- Ultra Low Gate Charge (Typ. Qg = 27 nC)
- Low Eoss (Typ. 2.8 uJ @ 400V)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF)
- 100% Avalanche Tested
- RoHS pliant
- ESD Improved Capability
- Part: FCPF650N80Z
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 655.14 KB
Other FCPF650N80Z Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCPF650N80Z | N-Channel MOSFET |