FCU3400N80Z Datasheet - Fairchild Semiconductor

MOSFET

FCU3400N80Z Features

* RDS(on) = 2.75 Ω (Typ.)

* Ultra Low Gate Charge (Typ. Qg = 7.4 nC)

* Low Eoss (Typ. 0.9 uJ @ 400V)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 41 pF)

* 100% Avalanche Tested

* RoHS Compliant

* ESD Improved Capability Applications D

FCU3400N80Z General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchi.

FCU3400N80Z Datasheet (719.89 KB)

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FCU3400N80Z

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Fairchild Semiconductor

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Mosfet.
FCD3400N80Z / FCU3400N80Z N-Channel SuperFET® II MOSFET March 2015 FCD3400N80Z / FCU3400N80Z N-Channel SuperFET® II MOSFET 800 V, 2 A, 3..

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FCU3400N80Z MOSFET Fairchild Semiconductor

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FCU3400N80Z Features

FCU3400N80Z General Description

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