Datasheet Summary
FDA16N50 500V N-Channel MOSFET
500V N-Channel MOSFET
Features
- 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
- Low gate charge ( typical 32 nC)
- Low Crss ( typical 20 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
April 2007
UniFETTM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies...
