Datasheet Summary
- N-Channel UniFETTM MOSFET
N-Channel UniFETTM MOSFET
500V, 16.5 A, 380 mΩ Features
- RDS(on) = 380 mΩ (Max.) @ VGS = 10, ID = 8.3 A
- Low Gate Charge (Typ. 32 nC)
- Low Crss (Typ. 20 pF)
- 100% Avalanche Tested
Applications
- PDP TV
- Uninterruptible Power Supply
Description
UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV...
