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FDA16N50-F109 - N-Channel MOSFET

General Description

UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 380 mΩ (Max. ) @ VGS = 10, ID = 8.3 A.
  • Low Gate Charge (Typ. 32 nC).
  • Low Crss (Typ. 20 pF).
  • 100% Avalanche Tested.

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FDA16N50-F109 — N-Channel UniFETTM MOSFET FDA16N50-F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 mΩ Features • RDS(on) = 380 mΩ (Max.) @ VGS = 10, ID = 8.3 A • Low Gate Charge (Typ. 32 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.