Datasheet Summary
FDA16N50_F109
- N-Channel UniFETTM MOSFET
November 2013
FDA16N50_F109
N-Channel UniFETTM MOSFET
500V, 16.5 A, 380 m Features
- RDS(on) = 380 m (Max.) @ VGS = 10, ID = 8.3 A
- Low Gate Charge (Typ. 32 nC)
- Low C rss (Typ. 20 pF)
- 100% Avalanche Tested
Description
UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology. This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance and higher avalanche energy strengt h. This device fami ly is suit able for switching power convert er applicatio ns such as power factor corr ection (PFC), flat p anel display (FPD) T V pow er, ATX and...
