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FDA16N50-F109 - N-Channel UniFET MOSFET

General Description

UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology.

This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance and higher avalanche energy strengt h.

Key Features

  • RDS(on) = 380 m (Max. ) @ VGS = 10, ID = 8.3 A.
  • Low Gate Charge (Typ. 32 nC).
  • Low C rss (Typ. 20 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDA16N50_F109 — N-Channel UniFETTM MOSFET November 2013 FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features • RDS(on) = 380 m (Max.) @ VGS = 10, ID = 8.3 A • Low Gate Charge (Typ. 32 nC) • Low C rss (Typ. 20 pF) • 100% Avalanche Tested Description UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology. This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance and higher avalanche energy strengt h. This device fami ly is suit able for switching power convert er applicatio ns such as power factor corr ection (PFC), flat p anel display (FPD) T V pow er, ATX and electronic lamp ballasts.