FDA20N50 Key Features
- 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V
- Low gate charge ( typical 45.6 nC)
- Low Crss ( typical 27 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: FDA20N50
- Manufacturer: Fairchild (official site)
- Size: 1.02 MB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDA20N50F | N-Channel MOSFET |
| FDA20N50_F109 | N-Channel UniFET MOSFET |
| FDA24N40F | N-Channel MOSFET |
| FDA24N50 | N-Channel MOSFET |
| FDA24N50F | N-Channel MOSFET |
FDA20N50 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...