FDA20N50F Key Features
- RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 11 A
- Low Gate Charge (Typ. 50 nC)
- Low Crss (Typ. 27 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS pliant
| Part Number | Description |
|---|---|
| FDA20N50 | 500V N-Channel MOSFET |
| FDA20N50_F109 | N-Channel UniFET MOSFET |
| FDA24N40F | N-Channel MOSFET |
| FDA24N50 | N-Channel MOSFET |
| FDA24N50F | N-Channel MOSFET |