FDA38N30 Key Features
- RDS(on) = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A
- Low Gate Charge (Typ. 60 nC)
- Low Crss (Typ. 60 pF)
- 100% Avalanche Tested
- ESD Improved Capability
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDA38N30 | N-Channel MOSFET |