n-channel mosfet.
* 46A, 280V, RDS(on) = 0.041Ω @VGS = 10 V
* Low gate charge ( typical 111 nC)
* Low Crss ( typical 90 pF)
* Fast switching
* 100% avalanche tested
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior s.
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