FDAF75N28 Description
TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...
FDAF75N28 Key Features
- 46A, 280V, RDS(on) = 0.041Ω @VGS = 10 V
- Low gate charge ( typical 111 nC)
- Low Crss ( typical 90 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability