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FDB024N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB024N06 — N-Channel PowerTrench® MOSFET FDB024N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.4 mΩ November 2013 Features • RDS(on) = 1.8 mΩ (Ty.

FDB024N08BL7 - MOSFET (Fairchild Semiconductor)
FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ Features • RDS(on) = 1.7 mΩ ( T.

FDB029N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB029N06 — N-Channel PowerTrench® MOSFET FDB029N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.4 mΩ (Ty.

FDB016N04AL7 - N-Channel MOSFET (Fairchild Semiconductor)
FDB016N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB016N04AL7 N-Channel PowerTrench® MOSFET 40 V, 306 A, 1.6 mW Features • RDS(on) = 1.16 mW (T.

FDB031N08 - N-Channel MOSFET (Fairchild Semiconductor)
FDB031N08 — N-Channel PowerTrench® MOSFET FDB031N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.4 mΩ (Ty.

FDB035AN06A0 - N-Channel MOSFET (Fairchild Semiconductor)
FDB035AN06A0 July 2002 FDB035AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.5mΩ Features • r DS(ON) = 3.2mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot).

FDB035N10A - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 100 V, 214 A, 3.5 mW FDB035N10A Description This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH proc.

FDB039N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB039N06 N-Channel PowerTrench® MOSFET July 2009 FDB039N06 N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ Features • RDS(on) = 2.95mΩ ( Typ.) @ VG.

FDB045AN08A0 - N-Channel MOSFET (Fairchild Semiconductor)
FDB045AN08A0 April 2002 FDB045AN08A0 N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.5mΩ Features • r DS(ON) = 3.9mΩ (Typ.), V GS = 10V, ID = 80A • Qg.

FDB045AN08A0-F085 - N-Channel MOSFET (ON Semiconductor)
FDB045AN08A0-F085 N-Channel PowerTrench® MOSFET FDB045AN08A0-F085 N-Channel PowerTrench® MOSFET 75V, 80A, 4.5m: Features • rDS(ON) = 3.9m: (Typ.), VG.