FDB024N04AL7 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Tele PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1. Source D (Pin4, tab) G (Pin1) S...
FDB024N04AL7 Key Features
- RDS(on) = 2.0 mΩ (Typ.)@ VGS = 10 V, ID = 80 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
FDB024N04AL7 Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit