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FDB035N10A - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batter

Key Features

  • RDS(on) = 3.0 mΩ ( Typ. ) @ VGS = 10 V, ID = 75 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 89 nC ( Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB035N10A — N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.5 mΩ November 2013 Features • RDS(on) = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge, QG = 89 nC ( Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.