* RDS(on) = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge, QG = 89 nC ( Typ.)
* High Performance Trench Technology for E.

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and U.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Synchronous Rectification f.

FDB035AN06A0

FDB031N08

FDB039N06

FDB016N04AL7

FDB024N04AL7

FDB024N06

FDB024N08BL7

FDB029N06

FDB045AN08A0

FDB045AN08A0-F085

FDB045AN08_F085

FDB047N10

FDB050AN06A0