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FDB2710 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD Drain-Source Voltage Gate-Source voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds FDB2710 250 ± 30 50 31.3 See Figure 9 145 4.5 260 2.1 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

Overview

FDB2710 — N-Channel PowerTrench® MOSFET November 2013 FDB2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.

Key Features

  • RDS(on) = 36.3 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • Low Gate Charge.
  • High Power and Current Handing Capability General.

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