* RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
* High Performance Trench Technology for Extremely Low RDS(on)
* Low Gate Charge
* High Power and Curre.

* Synchronous Rectification
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies .

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Synchronous Rectification
* Bat.

FDB20AN06A0

FDB24AN06LA0

FDB2532

FDB2532-F085

FDB2532_F085

FDB2552

FDB2552_F085

FDB2570

FDB2572

FDB2614

FDB2670

FDB28N30

FDB016N04AL7