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FDB2710 - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 50A@ TC=25℃.
  • Drain Source Voltage : VDSS= 250V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 42.5mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor FDB2710 FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pluse 150 A PD Total Dissipation @TC=25℃ 260 W TJ Max.