Datasheet4U Logo Datasheet4U.com

FDB2710 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification Battery Protection Circuit Motor Dr

Features

  • RDS(on) = 36.3 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • Low Gate Charge.
  • High Power and Current Handing Capability General.

📥 Download Datasheet

Datasheet preview – FDB2710

Datasheet Details

Part number FDB2710
Manufacturer Fairchild Semiconductor
File Size 1.14 MB
Description N-Channel MOSFET
Datasheet download datasheet FDB2710 Datasheet
Additional preview pages of the FDB2710 datasheet.

📁 Similar Datasheet

  • FDB2710 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • FDB2532 - N-Channel MOSFET (Kexin)
  • FDB2532-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDB2552 - N-Channel MOSFET (Kexin)
  • FDB2552 - 150V 37A N-Channel MOSFET (ON Semiconductor)
  • FDB2570 - N-Channel MOSFET (Kexin)
  • FDB2572 - N-Channel MOSFET (Kexin)
  • FDB2670 - N-Channel MOSFET (Kexin)
  • FDB035AN06A0 - N-Channel MOSFET (INCHANGE)
  • FDB035AN06A0 - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDB2710 — N-Channel PowerTrench® MOSFET November 2013 FDB2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ Features • RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • High Performance Trench Technology for Extremely Low RDS(on) • Low Gate Charge • High Power and Current Handing Capability General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Published: |