FDB2710 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. , Junction to Ambient (minimum pad of 2 oz copper), Max. , Junction to Ambient (1 in2 pad of 2 oz copper), Max.
FDB2710 Key Features
- RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
- High Performance Trench Technology for Extremely Low RDS(on)
- Low Gate Charge
- High Power and Current Handing Capability