FDB2710
FDB2710 is N-Channel MOSFET manufactured by Fairchild Semiconductor.
- N-Channel PowerTrench® MOSFET
November 2013
N-Channel PowerTrench® MOSFET
250 V, 50 A, 42.5 mΩ
Features
- RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
- High Performance Trench Technology for Extremely Low RDS(on)
- Low Gate Charge
- High Power and Current Handing Capability
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
D2-PAK...