Datasheet4U Logo Datasheet4U.com

FDB8896 - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

DC/DC converters tm

Features

  • rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A.
  • rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability D GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDB8896-F085 N-Channel Power MOSFET ON Semiconductor
FDB8832-F085 N-Channel MOSFET ON Semiconductor
FDB8870-F085 N-Channel Power MOSFET ON Semiconductor
FDB8880 N-Channel MOSFET INCHANGE
FDB8030L N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDB8832 N-Channel MOSFET
FDB8860 N-Channel MOSFET
FDB8860_F085 N-Channel Logic Level PowerTrench MOSFET
FDB8870 N-Channel MOSFET
FDB8870_F085 N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
FDB8896 May 2008 FDB8896 N-Channel PowerTrench® MOSFET 30V, 93A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters tm Features • rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4.
Published: |