Datasheet Details
| Part number | FDC637BNZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 369.60 KB |
| Description | MOSFET |
| Datasheet | FDC637BNZ-FairchildSemiconductor.pdf |
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Overview: FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 6.
| Part number | FDC637BNZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 369.60 KB |
| Description | MOSFET |
| Datasheet | FDC637BNZ-FairchildSemiconductor.pdf |
|
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|
September 2007 tm Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOT™–6 package: small footprint (72% smaller than standard SO-8;
low profile (1mm thick) HBM ESD protection level > 2kV typical (Note 3) Manufactured using green packaging material Halide-Free RoHS Compliant This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint compared with
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
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