FDC637AN
FDC637AN is N-Channel MOSFET manufactured by onsemi.
Description
Features
This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
- 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V
RDS(on) = 0.032 Ω @ VGS = 2.5 V
- Fast switching speed.
These devices have been designed to offer exceptional power dissipation in a very small footprint pared with bigger SO-8 and TSSOP-8 packages.
Applications
- DC/DC converter
- Load switch
- Battery Protection
- Low gate charge (10.5n C typical).
- High performance trench technology for extremely low RDS(ON).
- Super SOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Super SOT TM-6
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous Drain Current
- Pulsed Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Outlines and Ordering Information
Device Marking
Device
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