Description
These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- 2.7 A, 20 V. RDS(ON) = 0.08 Ω @ VGS = 4.5 V RDS(ON) = 0.12 Ω @ VGS = 2.5 V.
- Low gate charge (3.5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
FDC6305N Datasheet
