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FDC6301N - Dual N-Channel Digital FET

General Description

These dual N

transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Key Features

  • 25 V, 0.22 A Continuous, 0.5 A Peak.
  • RDS(on) = 5 W @ VGS = 2.7 V.
  • RDS(on) = 4 W @ VGS = 4.5 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
  • Gate.
  • Source Zener for ESD Ruggedness. >6 kV Human Body Model.
  • This is a Pb.
  • Free and Halide Free Device DATA SHEET www. onsemi. com D2 S1 D1 G2 G1S2 TSOT23 6.
  • Lead SUPERSOTt.
  • 6 CASE 419BL.

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Datasheet Details

Part number FDC6301N
Manufacturer onsemi
File Size 315.50 KB
Description Dual N-Channel Digital FET
Datasheet download datasheet FDC6301N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual, N-Channel, Digital FET FDC6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N−Channel FET’s can replace several digital transistors, with a variety of bias resistors. Features • 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V • Gate−Source Zener for ESD Ruggedness.