FDC6301N - Dual N-Channel Digital FET

Product Overview

ON Semiconductor

Part number	FDC6301N
Manufacturer	ON Semiconductor
File Size	315.50 KB
Description	Dual N-Channel Digital FET
Datasheet	FDC6301N Datasheet
Additional preview pages of the FDC6301N datasheet.

These dual N

transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

25 V, 0.22 A Continuous, 0.5 A Peak.
RDS(on) = 5 W @ VGS = 2.7 V.
RDS(on) = 4 W @ VGS = 4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
Gate.
Source Zener for ESD Ruggedness. >6 kV Human Body Model.
This is a Pb.
Free and Halide Free Device DATA SHEET www. onsemi. com D2 S1 D1 G2 G1S2 TSOT23 6.
Lead SUPERSOTt.
6 CASE 419BL.

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Published: Dec 12, 2021 |