Datasheet4U Logo Datasheet4U.com

FDC6301N Datasheet Dual N-channel Digital Fet

Manufacturer: onsemi

Overview: Dual, N-Channel, Digital FET FDC6301N General.

General Description

These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance.

This device has been designed especially for low voltage applications as a replacement for digital transistors.

Key Features

  • 25 V, 0.22 A Continuous, 0.5 A Peak.
  • RDS(on) = 5 W @ VGS = 2.7 V.
  • RDS(on) = 4 W @ VGS = 4.5 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
  • Gate.
  • Source Zener for ESD Ruggedness. >6 kV Human Body Model.
  • This is a Pb.
  • Free and Halide Free Device DATA SHEET www. onsemi. com D2 S1 D1 G2 G1S2 TSOT23 6.
  • Lead SUPERSOTt.
  • 6 CASE 419BL.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDC6301N Dual N-Channel / Digital FET Fairchild Semiconductor

More Datasheets from onsemi

Part Number Description
FDC6302P Dual P-Channel MOSFET
FDC6304P Dual P-Channel MOSFET
FDC6305N Dual N-Channel MOSFET
FDC6310P Dual P-Channel MOSFET
FDC6320C Dual N & P Channel Digital FET
FDC6321C Dual N & P-Channel Digital FET
FDC6323L Integrated Load Switch
FDC6324L Integrated Load Switch
FDC6325L Integrated Load Switch
FDC6326L Integrated Load Switch

FDC6301N Distributor