Datasheet Summary
Dual, N-Channel, Digital FET
General Description These dual N- Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on- state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N- Channel FET’s can replace several digital transistors, with a variety of bias resistors.
Features
- 25 V, 0.22 A Continuous, 0.5 A Peak
- RDS(on) = 5 W @ VGS = 2.7 V
- RDS(on) = 4 W @ VGS = 4.5 V
- Very Low Level Gate Drive Requirements...
