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FDC6306P Datasheet Dual P-channel 2.5v Specified Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDC6306P February 1999 FDC6306P Dual P-Channel 2.5V Specified PowerTrench™.

General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Key Features

  • -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V.
  • Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Similar Datasheet

Brand Logo Part Number Description Manufacturer
VBsemi Logo FDC6306P Dual P-Channel 20V MOSFET VBsemi
onsemi Logo FDC6306P P-Channel MOSFET onsemi

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FDC6306P Distributor