FDC6305N Description
These N−Channel low threshold 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance.
FDC6305N Key Features
- N-Channel 2.7 A, 20 V
- Fast Switching Speed
- Low Gate Charge (3.5 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-6 Package: Small Footprint (72% Smaller than
- This is a Pb-Free Device