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FDC6305N - Dual N-Channel MOSFET

General Description

These N Channel low threshold 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • N.
  • Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V.
  • Fast Switching Speed.
  • Low Gate Charge (3.5 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • This is a Pb.
  • Free Device.

📥 Download Datasheet

Datasheet Details

Part number FDC6305N
Manufacturer onsemi
File Size 327.67 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDC6305N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, N-Channel, POWERTRENCH) 2.5 V Specified FDC6305N General Description These N−Channel low threshold 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. Features • N−Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V • Fast Switching Speed • Low Gate Charge (3.5 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick) • This is a Pb−Free Device Applications • DC/DC Converter • Load Switch • Motor Driving DATA SHEET www.onsemi.com VDSS 20 V RDS(ON) MAX 0.08 W @ 4.5 V 0.