Description
These N
Channel low threshold 2.5 V specified MOSFETs are
produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- N.
- Channel 2.7 A, 20 V
RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V.
- Fast Switching Speed.
- Low Gate Charge (3.5 nC Typical).
- High Performance Trench Technology for Extremely Low RDS(ON).
- SUPERSOTt.
- 6 Package: Small Footprint (72% Smaller than
Standard SO.
- 8); Low Profile (1 mm Thick).
- This is a Pb.
- Free Device.
FDC6305N Datasheet
