FDC6304P Description
These P-Channel enhancement mode field effect transistor are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook puters and cellular phones.
FDC6304P Key Features
- 25 V, -0.46 A continuous, -1.0 A Peak