FDC6304P Datasheet Dual P-channel MOSFET

Manufacturer: onsemi

Overview: FDC6304P Digital FET, Dual P-Channel General.

Datasheet Details

These P-Channel enhancement mode field effect transistor are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance at low gate drive conditions.

This device is designed especially for application in battery power applications such as notebook puters and cellular phones.

-25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .304 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current.

Brand Logo	Part Number	Description	Manufacturer
	FDC6304P	Digital FET/ Dual P-Channel	Fairchild Semiconductor