FDC6303N - Dual N-Channel Digital FET

Product Overview

onsemi

Datasheet Details

Part number	FDC6303N
Manufacturer	onsemi
File Size	263.56 KB
Description	Dual N-Channel Digital FET
Datasheet	FDC6303N Datasheet
Additional preview pages of the FDC6303N datasheet.

Product details

Description

These dual N Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance. Channel FET can replace several digital trans

Features

25 V, 0.68 A Continuous, 2 A Peak.
RDS(on) = 0.6 W @ VGS = 2.7 V.
RDS(on) = 0.45 W @ VGS= 4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1.5 V.
Gate.
Source Zener for ESD Ruggedness, >6 kV Human Body Model.
Replace Multiple NPN Digital Transistors (IMHxA Series) with One DMOS FET.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Apr 14, 2025 |