FDC6303N - Dual N-Channel Digital FET

Product Overview

onsemi

Part number	FDC6303N
Manufacturer	onsemi
File Size	263.56 KB
Description	Dual N-Channel Digital FET
Datasheet	FDC6303N Datasheet
Additional preview pages of the FDC6303N datasheet.

These dual N

transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

25 V, 0.68 A Continuous, 2 A Peak.
RDS(on) = 0.6 W @ VGS = 2.7 V.
RDS(on) = 0.45 W @ VGS= 4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1.5 V.
Gate.
Source Zener for ESD Ruggedness, >6 kV Human Body Model.
Replace Multiple NPN Digital Transistors (IMHxA Series) with One DMOS FET.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Apr 14, 2025 |