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FDC6303N Datasheet Dual N-channel Digital Fet

Manufacturer: onsemi

Overview: DATA SHEET .onsemi. Digital FET, Dual N-Channel FDC6303N General.

Datasheet Details

Part number FDC6303N
Manufacturer onsemi
File Size 263.56 KB
Description Dual N-Channel Digital FET
Datasheet FDC6303N-onsemi.pdf

General Description

These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance.

This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications.

Key Features

  • 25 V, 0.68 A Continuous, 2 A Peak.
  • RDS(on) = 0.6 W @ VGS = 2.7 V.
  • RDS(on) = 0.45 W @ VGS= 4.5 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1.5 V.
  • Gate.
  • Source Zener for ESD Ruggedness, >6 kV Human Body Model.
  • Replace Multiple NPN Digital Transistors (IMHxA Series) with One DMOS FET.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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