Datasheet Details
| Part number | FDC6303N |
|---|---|
| Manufacturer | onsemi |
| File Size | 263.56 KB |
| Description | Dual N-Channel Digital FET |
| Datasheet |
 FDC6303N Datasheet
|
|
|
General Description
These dual N
transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
state resistance.
Key Features
- 25 V, 0.68 A Continuous, 2 A Peak.
- RDS(on) = 0.6 W @ VGS = 2.7 V.
- RDS(on) = 0.45 W @ VGS= 4.5 V.
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1.5 V.
- Gate.
- Source Zener for ESD Ruggedness, >6 kV Human Body Model.
- Replace Multiple NPN Digital Transistors (IMHxA Series) with One DMOS FET.
- This Device is Pb.
- Free, Halide Free and is RoHS Compliant.