FDC6303N Datasheet | onsemi

DATA SHEET .onsemi. Digital FET, Dual N-Channel FDC6303N General Description These dual N- Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on- state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N- Channel FET can replace several digital transistors with different bias resistors like the IMHxA series. Features - 25 V, 0.68 A Continuous, 2 A Peak - RDS(on) = 0.6 W @ VGS = 2.7 V -...