FDC6303N Description
These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications.
FDC6303N Key Features
- 25 V, 0.68 A Continuous, 2 A Peak
- RDS(on) = 0.6 W @ VGS = 2.7 V
- RDS(on) = 0.45 W @ VGS= 4.5 V
- Very Low Level Gate Drive Requirements Allowing Direct
- Gate-Source Zener for ESD Ruggedness
- Replace Multiple NPN Digital Transistors (IMHxA Series) with One
- This Device is Pb-Free, Halide Free and is RoHS pliant