FDC6301N Datasheet PDF

The FDC6301N is a Dual N-Channel Digital FET.

Datasheet4U Logo
Part NumberFDC6301N Datasheet
Manufactureronsemi
Overview These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tai.
* 25 V, 0.22 A Continuous, 0.5 A Peak
* RDS(on) = 5 W @ VGS = 2.7 V
* RDS(on) = 4 W @ VGS = 4.5 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V
* Gate
*Source Zener for ESD Ruggedness. >6 kV Human Body Model
* This is a Pb
*Free and Halide Free Dev.
Part NumberFDC6301N Datasheet
DescriptionDual N-Channel / Digital FET
ManufacturerFairchild Semiconductor
Overview These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially. 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .301 SuperSOTTM-8 SO.