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FDC6327C - Dual-Channel MOSFET

General Description

These N & P Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • N.
  • Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V.
  • P.
  • Channel.
  • 1.6 A,.
  • 20 V RDS(ON) = 0.17 W @ VGS =.
  • 4.5 V RDS(ON) = 0.25 W @ VGS =.
  • 2.5 V.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% Smaller than SO.
  • 8); Low Profile (1 mm Thick).
  • This is a.

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Datasheet Details

Part number FDC6327C
Manufacturer onsemi
File Size 357.25 KB
Description Dual-Channel MOSFET
Datasheet download datasheet FDC6327C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, N & P-Channel, POWERTRENCH) 2.5 V Specified FDC6327C General Description These N & P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features • N−Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V • P−Channel −1.6 A, −20 V RDS(ON) = 0.17 W @ VGS = −4.5 V RDS(ON) = 0.25 W @ VGS = −2.