FDC6327C Description
These N & P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are...
FDC6327C Key Features
- N-Channel 2.7 A, 20 V
- P-Channel -1.6 A, -20 V
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-6 Package: Small Footprint (72% Smaller than
- This is a Pb-Free Device