FDC6327C Datasheet and Specifications PDF

These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain .

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* N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V RDS(on) = 0.12Ω @ VGS = 2.5V P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @ VGS = -4.5V RDS(on)= 0.25Ω @ VGS = -2.5V Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small.

These N & P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge .

* N
*Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V
* P
*Channel
*1.6 A,
*20 V RDS(ON) = 0.17 W @ VGS =
*4.5 V RDS(ON) = 0.25 W @ VGS =
*2.5 V
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(ON)
* SUPERSOTt
*6 Packag.