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FDC637BNZ - MOSFET

General Description

September 2007 tm Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOT™ 6

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 6.2A, 24mΩ Features General Description September 2007 tm „ Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A „ Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A „ Fast switching speed „ Low gate charge (8nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOT™–6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) „ HBM ESD protection level > 2kV typical (Note 3) „ Manufactured using green packaging material „ Halide-Free „ RoHS Compliant This N-Channel 2.