FDC637BNZ Overview
September 2007 tm Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOT™ 6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) HBM ESD protection level > 2kV typical (Note 3) Manufactured using green packaging material...
FDC637BNZ Key Features
- Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A
- Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A
- Fast switching speed
- Low gate charge (8nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOT™-6 package: small footprint (72% smaller than
- HBM ESD protection level > 2kV typical (Note 3)
- Manufactured using green packaging material
- Halide-Free
- RoHS pliant
