FDC637BNZ
Description
September 2007 tm Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOT™–6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) HBM ESD protection level > 2kV typical (Note 3) Manufactured using green packaging material Halide-Free RoHS pliant This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
