FDC6321C
Overview
These dual N & P Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
- N-Channel 0.68 A, 25 V RDS(ON) = 0.45 W @ VGS = 4.5 V
- P-Channel -0.46 A, -25 V RDS(ON) = 1.1 W @ VGS = -4.5 V
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.0 V.
- Gate-Source Zener for ESD Ruggedness. >6 kV Human Body Model
- Replace Multiple Dual NPN & PNP Digital Transistors
- This is a Pb-Free Device
