Datasheet Summary
Dual, N & P-Channel, Digital FET
General Description These dual N & P Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on- state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.
Features
- N- Channel 0.68 A, 25 V
RDS(ON) = 0.45 W @ VGS = 4.5 V
- P- Channel
- 0.46 A,
- 25 V
RDS(ON) = 1.1 W @ VGS =
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