FDC638APZ - P-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDC638APZ
Manufacturer	ON Semiconductor
File Size	387.90 KB
Description	P-Channel MOSFET
Datasheet	FDC638APZ Datasheet
Additional preview pages of the FDC638APZ datasheet.

Product details

Description

This P Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

Max rDS(on) = 43 mW at VGS =.
4.5 V, ID =.
4.5 A.
Max rDS(on) = 68 mW at VGS =.
2.5 V, ID =.
3.8 A.
Low Gate Charge (8 nC typical).
High Performance Trench Technology for Extremely Low rDS(on).
SUPERSOTt.
6 Package: Small Footprint (72% smaller than Standard SO.
8) Low Profile (1 mm thick).
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 12, 2021 |