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MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH)
-20 V, -4.5 A, 43 mW
FDC638APZ
General Description This P−Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
• Max rDS(on) = 43 mW at VGS = −4.5 V, ID = −4.5 A • Max rDS(on) = 68 mW at VGS = −2.5 V, ID = −3.
FDC638APZ Datasheet
