FDC638APZ
Description
This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- Max rDS(on) = 43 mW at VGS = −4.5 V, ID = −4.5 A
- Max rDS(on) = 68 mW at VGS = −2.5 V, ID = −3.8 A
- Low Gate Charge (8 nC typical)
- High Performance Trench Technology for Extremely Low rDS(on)
- SUPERSOTt−6 Package: Small Footprint (72% smaller than
- This Device is Pb−Free, Halide Free and is RoHS pliant
Applications
- DC−DC Conversion
