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FDC638APZ Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -4.

General Description

This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Key Features

  • Max rDS(on) = 43 mW at VGS =.
  • 4.5 V, ID =.
  • 4.5 A.
  • Max rDS(on) = 68 mW at VGS =.
  • 2.5 V, ID =.
  • 3.8 A.
  • Low Gate Charge (8 nC typical).
  • High Performance Trench Technology for Extremely Low rDS(on).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% smaller than Standard SO.
  • 8) Low Profile (1 mm thick).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

FDC638APZ Distributor & Price

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Similar Datasheet

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