Description
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- 2.3 A,.
- 20 V. RDS(ON) = 115 mΩ @ VGS =.
- 4.5 V RDS(ON) = 155 mΩ @ VGS =.
- 2.5 V RDS(ON) = 225 mΩ @ VGS =.
- 1.8 V.
- High performance trench technology for extremely low RDS(ON).
- SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
FDC6312P Datasheet
