FDC6312P
FDC6312P is Dual P-Channel MOSFET manufactured by Fairchild Semiconductor.
January 2001
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- - 2.3 A,
- 20 V. RDS(ON) = 115 mΩ @ VGS =
- 4.5 V RDS(ON) = 155 mΩ @ VGS =
- 2.5 V RDS(ON) = 225 mΩ @ VGS =
- 1.8 V
- High performance trench technology for extremely low RDS(ON)
- SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
Applications
- Power management
- Load switch
D2 S1 D1
4...
