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FDC6312P - Dual P-Channel MOSFET

General Description

These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 2.3 A,.
  • 20 V. RDS(ON) = 115 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 155 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 225 mΩ @ VGS =.
  • 1.8 V.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC6312P January 2001 FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Features • –2.3 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V RDS(ON) = 155 mΩ @ VGS = –2.5 V RDS(ON) = 225 mΩ @ VGS = –1.