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FDC6310P - Dual P-Channel MOSFET

General Description

These P Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 2.2 A,.
  • 20 V.
  • RDS(ON) = 125 mW @ VGS =.
  • 4.5 V.
  • RDS(ON) = 190 mW @ VGS =.
  • 2.5 V.
  • Low Gate Charge.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 6 Package: Small Footprint 72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet Details

Part number FDC6310P
Manufacturer onsemi
File Size 275.33 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDC6310P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -2.2 A, 125 mW FDC6310P General Description These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features • –2.2 A, –20 V ♦ RDS(ON) = 125 mW @ VGS = –4.5 V ♦ RDS(ON) = 190 mW @ VGS = –2.