Description
These P
Channel 2.5 V specified MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- 2.2 A,.
- 20 V.
- RDS(ON) = 125 mW @ VGS =.
- 4.5 V.
- RDS(ON) = 190 mW @ VGS =.
- 2.5 V.
- Low Gate Charge.
- Fast Switching Speed.
- High Performance Trench Technology for Extremely Low RDS(ON).
- SUPERSOTt.
- 6 Package: Small Footprint 72% Smaller than
Standard SO.
- 8); Low Profile (1 mm Thick).
- This Device is Pb.
- Free, Halide Free and is RoHS Compliant.
FDC6310P Datasheet
