FDC6310P Overview
Description
These P-Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Key Features
- 2.2 A, –20 V
- RDS(ON) = 125 mW @ VGS = –4.5 V
- RDS(ON) = 190 mW @ VGS = –2.5 V
- Low Gate Charge
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-6 Package: Small Footprint 72% Smaller than Standard SO-8); Low Profile (1 mm Thick)
- This Device is Pb-Free, Halide Free and is RoHS Compliant
