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FDC6310P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 2.2 A,.
  • 20 V. RDS(ON) = 125 mΩ @ V GS =.
  • 4.5 V RDS(ON) = 190 mΩ @ V GS =.
  • 2.5 V.
  • Low gate charge.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC6310P April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • –2.2 A, –20 V. RDS(ON) = 125 mΩ @ V GS = –4.5 V RDS(ON) = 190 mΩ @ V GS = –2.