FDC6310P Datasheet | Fairchild Semiconductor

April 2001 Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features - - 2.2 A, - 20 V. RDS(ON) = 125 mΩ @ V GS = - 4.5 V RDS(ON) = 190 mΩ @ V GS = - 2.5 V - Low gate charge - Fast switching speed - High performance trench...