Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- 2.2 A,.
- 20 V. RDS(ON) = 125 mΩ @ V GS =.
- 4.5 V RDS(ON) = 190 mΩ @ V GS =.
- 2.5 V.
- Low gate charge.
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick).
FDC6310P Datasheet
