FDC6310P Overview
Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Key Features
- 2.2 A, –20 V. RDS(ON) = 125 mΩ @ V GS = –4.5 V RDS(ON) = 190 mΩ @ V GS = –2.5 V
- Low gate charge
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick)
