FDC6318P Datasheet | Fairchild Semiconductor

December 2001 Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Features - - 2.5 A, - 12 V. RDS(ON) = 90 mΩ @ VGS = - 4.5 V RDS(ON) = 125 mΩ @ VGS = - 2.5 V RDS(ON) = 200 mΩ @ VGS = - 1.8 V - High performance trench technology for extremely low RDS(ON) - SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) Applications - Power management - Load switch S1 D1 D2 4...