Part Number	FDC6310P Datasheet
Manufacturer	onsemi
Overview	These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for . * *2.2 A, *20 V * RDS(ON) = 125 mW @ VGS = *4.5 V * RDS(ON) = 190 mW @ VGS = *2.5 V * Low Gate Charge * Fast Switching Speed * High Performance Trench Technology for Extremely Low RDS(ON) * SUPERSOTt *6 Package: Small Footprint 72% Smaller than Standard SO *8); Low Profile (1 mm Thick) * This Device i.