FDC6310P Description
These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are...
FDC6310P Key Features
- 2.2 A, -20 V
- RDS(ON) = 125 mW @ VGS = -4.5 V
- RDS(ON) = 190 mW @ VGS = -2.5 V
- Low Gate Charge
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-6 Package: Small Footprint 72% Smaller than
- This Device is Pb-Free, Halide Free and is RoHS pliant