FDC638P
Description
This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- RDS(on) = 48 mW @ VGS = −4.5 V
- RDS(on) = 65 mW @ VGS = −2.5 V
- Low Gate Charge (10 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt−6 Package: Small Footprint (72% Smaller than
- This Device is Pb−Free, Halide Free and is RoHS pliant
