FDC634P - P-Channel MOSFET

onsemi

General Description

This P

voltage POWERTRENCH process.

It has been optimized for battery power management applications.

Key Features

3.5 A,.
20 V RDS(ON) = 80 mW @ VGS =.
4.5 V RDS(ON) = 110 mW @ VGS =.
2.5 V.
Low Gate Charge (7.2 nC Typical).
High Performance Trench Technology for Extremely Low RDS(ON).

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FDC634P p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDC634P
Manufacturer	onsemi
File Size	340.25 KB
Description	P-Channel MOSFET
Datasheet	FDC634P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel 2.5 V Specified POWERTRENCH) FDC634P General Description This P−Channel 2.5 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V • Low Gate Charge (7.2 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) Applications • Battery Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±8 V ID Drain Current − Continuous (Note 1a) −3.5 A − Pulsed −20 A PD Maximum Power (Note 1a) Dissipation (Note 1b) 1.6 W 0.