FDC634P Description
This P−Channel 2.5 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications.
FDC634P Key Features
- 3.5 A, -20 V
- Low Gate Charge (7.2 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)