FDC637AN
FDC637AN is N-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint pared with bigger SO-8 and TSSOP-8 packages.
Features
- 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V
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Fast switching speed. Low gate charge (10.5n C typical). High performance trench technology for extremely low RDS(ON). Super SOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications
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- DC/DC converter Load switch Battery Protection
Super SOT TM -6
3 4
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, T stg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current
- Continuous
- Pulsed
TA = 25°C unless otherwise noted
Parameter
20 ±8
(Note 1a)
Units
V V A W °C
6.2 20 1.6 0.8 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
Package Outlines and Ordering Information
Device...
