FDC638APZ Overview
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion. Application DC - DC...
FDC638APZ Key Features
- Max rDS(on) = 43mΩ at VGS = -4.5V, ID = -4.5A
- Max rDS(on) = 68mΩ at VGS = -2.5V, ID = -3.8A
- Low gate charge (8nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOTTM -6 package:small footprint (72% smaller than standard SO-8) low profile (1mm thick)
- RoHS pliant
