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MOSFET – N & P-Channel, POWERTRENCH)
30 V
FDC6333C
General Description These N & P−Channel MOSFETs are produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.
Features
• Q1 2.5 A, 30 V
♦ RDS(on) = 95 mW @ VGS = 10 V ♦ RDS(on) = 150 mW @ VGS = 4.5 V
• Q2 −2.0 A, −30 V
♦ RDS(on) = 130 mW @ VGS = −10 V ♦ RDS(on) = 220 mW @ VGS = −4.
FDC6333C Datasheet
