FDC6333C - 30V N & P-Channel PowerTrench MOSFETs

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC6333C
Manufacturer	Fairchild Semiconductor
File Size	98.45 KB
Description	30V N & P-Channel PowerTrench MOSFETs
Datasheet	FDC6333C Datasheet
Additional preview pages of the FDC6333C datasheet.

Product details

Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V.
Q2.
2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS =.
10 V RDS(ON) = 220 mΩ @ VGS =.
4.5 V.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
SuperSOT.
6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

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Published: Mar 30, 2005 |