Datasheet4U Logo Datasheet4U.com

FDC6333C - 30V N & P-Channel PowerTrench MOSFETs

General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V.
  • Q2.
  • 2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS =.
  • 10 V RDS(ON) = 220 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT.
  • 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDC6333C N- & P-Channel Power MOSFET On Semiconductor
FDC6330L Integrated Load Switch ON Semiconductor
FDC6331L Integrated Load Switch ON Semiconductor
FDC6301N Dual N-Channel Digital FET ON Semiconductor
FDC6302P Dual P-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDC6330L Integrated Load Switch
FDC6331L Integrated Load Switch
FDC6332L Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET
FDC633N N-Channel MOSFET
FDC6301N Dual N-Channel / Digital FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDC6333C October 2001 FDC6333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V • Q2 –2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = –10 V RDS(ON) = 220 mΩ @ VGS = –4.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON).