FDC6333C Datasheet | Fairchild Semiconductor

Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features - Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V - Q2 - 2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = - 10 V RDS(ON) = 220 mΩ @ VGS = - 4.5 V - Low gate charge - High performance trench technology for extremely low RDS(ON). - Super SOT - 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick). Applications - DC/DC converter - Load switch - LCD display inverter D2 S1 D1 Q2(P) G2 3 2 1 Q1(N) 5 6 Super SOT Pin 1 -6 S2 G1 Super SOT™-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Q1 30 ±16 (Note...