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FDC6333C Datasheet 30v N & P-channel Powertrench MOSFETs

Manufacturer: Fairchild (now onsemi)

Overview: FDC6333C October 2001 FDC6333C 30V N & P-Channel PowerTrench®.

General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Key Features

  • Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V.
  • Q2.
  • 2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS =.
  • 10 V RDS(ON) = 220 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT.
  • 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

FDC6333C from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
On Semiconductor Logo FDC6333C N- & P-Channel Power MOSFET On Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number Description
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FDC6301N Dual N-Channel / Digital FET
FDC6302P Digital FET/ Dual P-Channel
FDC6303N Dual N-Channel Digital FET
FDC6304P Digital FET/ Dual P-Channel
FDC6305N Dual N-Channel MOSFET
FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET

FDC6333C Distributor