FDC633N Datasheet PDF - Fairchild Semiconductor N-Channel MOSFET Specs

FDC633N - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance.

Features

5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .63 3 2 5 G SuperSOT TM pin 1 D D 3 4 -6 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter VDSS VGSS.

Datasheet Details

Part number	FDC633N
Manufacturer	Fairchild Semiconductor
File Size	278.75 KB
Description	N-Channel MOSFET
Datasheet	FDC633N Datasheet
Additional preview pages of the FDC633N datasheet.

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Full PDF Text Transcription

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March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package. Features 5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.

Published: Mar 30, 2005 |