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FDC634P - P-Channel MOSFET

Description

This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process.

It has been optimized for battery power management applications.

Battery management Load switch Battery protection

Features

  • 3.5 A,.
  • 20 V. RDS(ON) = 80 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 110 mΩ @ VGS =.
  • 2.5 V.
  • Low gate charge (7.2 nC typical).
  • High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (.

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Datasheet preview – FDC634P

Datasheet Details

Part number FDC634P
Manufacturer Fairchild Semiconductor
File Size 157.87 KB
Description P-Channel MOSFET
Datasheet download datasheet FDC634P Datasheet
Additional preview pages of the FDC634P datasheet.

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Full PDF Text Transcription

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FDC634P September 2001 FDC634P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch • Battery protection Features • –3.5 A, –20 V. RDS(ON) = 80 mΩ @ VGS = –4.5 V RDS(ON) = 110 mΩ @ VGS = –2.5 V • Low gate charge (7.
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