FDC634P
Description
This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process.
Key Features
- 3.5 A, –20 V. RDS(ON) = 80 mΩ @ VGS = –4.5 V RDS(ON) = 110 mΩ @ VGS = –2.5 V
- Low gate charge (7.2 nC typical)
- High performance trench technology for extremely
Applications
- Battery management
