FDC642P_F085 Datasheet | Fairchild Semiconductor

ures - Typ r DS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A - Typ r DS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A - Fast switching speed - Low gate charge(6.9n C typical) - High performance trench technology for extremely low r DS(on) - Super SOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick). - Ro HS pliant - Qualified to AEC Q101 Applications - Load switch - Battery protection - Power management June 2009 Super SOT TM-6 S4 D5 D6 3G 2D 1D ©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A .fairchildsemi. FDC642P_F085 P-Channel Power Trench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 4.5V) Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SSOT-6, 1in2 copper pad area Ratings -20 ±8 -4 -20 72...