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Fairchild Semiconductor Electronic Components Datasheet

FDC642P_F085 Datasheet

P-Channel PowerTrench MOSFET

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FDC642P_F085
P-Channel PowerTrench® MOSFET
-20V, -4A, 100m
Features
„ Typ rDS(on) = 52.5mat VGS = -4.5V, ID = -4A
„ Typ rDS(on) = 75.3mat VGS = -2.5V, ID = -3.2A
„ Fast switching speed
„ Low gate charge(6.9nC typical)
„ High performance trench technology for extremely low
rDS(on)
„ SuperSOTTM-6 package:small footprint(72% smaller
than standard SO-8);low profile(1mm thick).
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Load switch
„ Battery protection
„ Power management
June 2009
S
D
D
SuperSOT TM-6
G
D
D
S4
D5
D6
3G
2D
1D
©2009 Fairchild Semiconductor Corporation
FDC642P_F085 Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDC642P_F085 Datasheet

P-Channel PowerTrench MOSFET

No Preview Available !

MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (VGS = 4.5V)
Pulsed
EAS Single Pulse Avalanche Energy
PD Power Dissipation
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient SSOT-6, 1in2 copper pad area
Ratings
-20
±8
-4
-20
72
1.2
-55 to +150
Units
V
V
A
mJ
W
oC
30 oC/W
103 oC/W
Package Marking and Ordering Information
Device Marking
Device
FDC642P
FDC642P_F085
Package
SSOT-6
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
ID = -250µA, VGS = 0V
VDS = -16V,
VGS = ±8V,
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
VGS = VDS, ID = -250µA
ID = -4A, VGS = -4.5V
ID = -3.2A, VGS = -2.5V
ID = -4A, VGS = -4.5V,
TJ = 125oC
ID = -4A, VDD = -5V
Ciss
Coss
Crss
Rg
Qg(TOT)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at -4.5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = -10V, VGS = 0V,
f = 1MHz
f = 1MHz
VDD = -10V, ID = -4A
VGS = -4.5V
Min Typ Max Units
-20 -
-V
- - -1 µA
- - ±100 nA
-0.4 -0.7 -1.5
V
- 52.5 65
-
75.3 100
m
- 72.7 105
- 10 -
S
- 630 - pF
- 160 - pF
- 65
- pF
- 4.4 -
- 6.9 9.0 nC
- 1.2 - nC
- 1.8
- nC
FDC642P_F085 Rev. A
2
www.fairchildsemi.com


Part Number FDC642P_F085
Description P-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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